The article presents 3D-simulation system designed to analyze the characteristics of electron injection processes at diagnostics and modification of ferroelectrics with the scanning electron microscope techniques. The discrete stochastic model of electron trajectories was based on physical model of single interactions. The computational scheme was constructed with use of Monte Carlo simulation. The software application was suggested in order to perform the estimations of characteristics of electron injection effects in typical ferroelectrics. The characteristics specification of electron beam interaction area with irradiated target as well as the analytical expression for electron energy losses distribution were also descried with use of computing experiments data. The relationship of principal simulation parameters were indicated to control the field effects of the injected charges in ferroelectrics under electron irradiation.
Павельчук А.В., Масловская А.Г. Численное стохастическое моделирование транспорта электронов в облученных сегнетоэлектрических материалах. Математическое моделирование и численные методы, 2018, № 2, с. 3–20.